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NDC632

P-Channel MOSFET

NDC632 Features

* -2.7A, -20V. RDS(ON) = 0.14Ω @ VGS = -4.5V RDS(ON) = 0.2Ω @ VGS = -2.7V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.

NDC632 General Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

NDC632 Datasheet (254.32 KB)

Preview of NDC632 PDF

Datasheet Details

Part number:

NDC632

Manufacturer:

Fairchild

File Size:

254.32 KB

Description:

P-channel mosfet.

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TAGS

NDC632 P-Channel MOSFET Fairchild

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