NDC651N N-Channel MOSFET

Fairchild

Description

March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number: NDC651N
Manufacturer: Fairchild
File Size: 245.78 KB
Datasheet: NDC651N_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 3.2A, 30V. RDS(ON) = 0.09Ω @ VGS = 4.5V RDS(ON) = 0.06Ω @ VGS = 10V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___

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