Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- 3.2A, 30V. RDS(ON) = 0.09Ω @ VGS = 4.5V RDS(ON) = 0.06Ω @ VGS = 10V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________
4
3
5
2
6
1
Absolute Maximum Ratings T A = 25°C unless otherwise note
Symbol Parameter VDSS VGSS ID PD.
NDC651N_FairchildSemiconductor.pdf
