NDC651N Datasheet (Fairchild)

NDC651N, N-Channel MOSFET

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications i

NDC651N Features

* 3.2A, 30V. RDS(ON) = 0.09Ω @ VGS = 4.5V RDS(ON) = 0.06Ω @ VGS = 10V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___