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NDC651N

N-Channel MOSFET

NDC651N Features

* 3.2A, 30V. RDS(ON) = 0.09Ω @ VGS = 4.5V RDS(ON) = 0.06Ω @ VGS = 10V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___

NDC651N General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications i.

NDC651N Datasheet (245.78 KB)

Preview of NDC651N PDF

Datasheet Details

Part number:

NDC651N

Manufacturer:

Fairchild

File Size:

245.78 KB

Description:

N-channel mosfet.

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NDC651N N-Channel MOSFET Fairchild

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