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NDC652P

P-Channel MOSFET

NDC652P Features

* -2.4A, -30V. RDS(ON) = 0.18Ω @ VGS = -4.5V RDS(ON) = 0.11Ω @ VGS = -10V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.

NDC652P General Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

NDC652P Datasheet (247.81 KB)

Preview of NDC652P PDF

Datasheet Details

Part number:

NDC652P

Manufacturer:

Fairchild

File Size:

247.81 KB

Description:

P-channel mosfet.

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TAGS

NDC652P P-Channel MOSFET Fairchild

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