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NDC631N

N-Channel MOSFET

NDC631N Features

* 4.1 A, 20 V. RDS(ON) = 0.06 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS =2.7 V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capabilit

NDC631N General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications i.

NDC631N Datasheet (246.24 KB)

Preview of NDC631N PDF

Datasheet Details

Part number:

NDC631N

Manufacturer:

Fairchild

File Size:

246.24 KB

Description:

N-channel mosfet.

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NDC631N N-Channel MOSFET Fairchild

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