Description
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- N-Channel 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V P-Channel -0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V. High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current. ____________________________________________________________________________________________
4
3
5
2
6
SuperSOTTM-6
1
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage
T A = 25°C unless other.
NDC7001_FairchildSemiconductor.pdf
