NDC7002N Datasheet (Fairchild) - Dual N-Channel MOSFET

NDC7002N, Dual N-Channel MOSFET

These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

These dev

NDC7002N Features

* 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current. ___________________________________________________________________________________