NDC632P Datasheet (Fairchild)

NDC632P, P-Channel MOSFET

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage app

NDC632P Features

* -2.7A, -20V. RDS(ON) = 0.14Ω @ VGS = -4.5V RDS(ON) = 0.2Ω @ VGS = -2.7V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.