NDC652 P-Channel MOSFET

Fairchild

Description

March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number: NDC652
Manufacturer: Fairchild
File Size: 247.81 KB
Datasheet: NDC652_FairchildSemiconductor.pdf
Description: P-Channel MOSFET

Features

* -2.4A, -30V. RDS(ON) = 0.18Ω @ VGS = -4.5V RDS(ON) = 0.11Ω @ VGS = -10V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.

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