NDS356AP - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Fairchild

Datasheet Details

Part number	NDS356AP
Manufacturer	Fairchild
File Size	78.75 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	NDS356AP Datasheet
Additional preview pages of the NDS356AP datasheet.

Product details

Description

SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

-1.1 A, -30 V, RDS(ON) = 0.3 Ω @ VGS=-4.5 V RDS(ON) = 0.2 Ω @ VGS=-10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source.

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Published: May 12, 2005 |