-3.4A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount p.

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior sw.

NDS9405

NDS9407

NDS9410A

NDS9410S

NDS9430

NDS9430A

NDS9435A

NDS96P

NDS9925A

NDS9933A

NDS9936

NDS9945

NDS9947