-5.3A, -20V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.065Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and c.

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior swi.

NDS9430

NDS9435A

NDS9400A

NDS9405

NDS9407

NDS9410A

NDS9410S

NDS96P

NDS9925A

NDS9933A

NDS9936

NDS9945

NDS9947