single p-channel mosfet.
-3.0A, -60V. RDS(ON) = 0.15Ω @ VGS =-10V
R DS(ON) = 0.24Ω @ VGS =-4.5V.
High density cell design for extremely low R DS(ON). High power and current handling capability .
such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior sw.
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