NDT2955 mosfet equivalent, p-channel mosfet.
-2.5A, -60V. RDS(ON) = 0.3Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount pa.
such as notebook computer power management and DC motor control.
Features
-2.5A, -60V. RDS(ON) = 0.3Ω @ VGS = -10V. Hig.
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide supe.
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