NDT2955 Datasheet - Fairchild

P-Channel MOSFET

NDT2955 Features

* -2.5A, -60V. RDS(ON) = 0.3Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________________________ D D G D S G

NDT2955 General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are part.

NDT2955 Datasheet (92.03 KB)

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NDT2955

Manufacturer:

Fairchild

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92.03 KB

Description:

P-channel mosfet.

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NDT2955 P-Channel MOSFET Fairchild

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NDT2955 Features

NDT2955 General Description

Datasheet Details

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