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NDT014 N-Channel MOSFET

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Description

September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General .
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Features

* 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _________________________________________________________________________________________________________ D D G D S G

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