NDT451AN Datasheet - Fairchild

NDT451AN N-Channel MOSFET

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are part.

NDT451AN Features

* 7.2A, 30V. RDS(ON) = 0.035Ω @ VGS = 10V RDS(ON) = 0.05Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ________________________________________________________________________________ D D G D

NDT451AN_FairchildSemiconductor.pdf