NDT452AP P-Channel MOSFET

Fairchild

Description

June 1996 NDT452AP P-Channel Enhancement Mode Field Effect Transistor General .
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDT452AP
Manufacturer: Fairchild
File Size: 92.95 KB
Datasheet: NDT452AP_FairchildSemiconductor.pdf
Description: P-Channel MOSFET

Features

* -5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ________________________________________________________________________________ D D G D

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NDT452AP P-Channel MOSFET Fairchild

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