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NDT451N N-Channel MOSFET

NDT451N Description

September 1996 NDT451N N-Channel Enhancement Mode Field Effect Transistor General .
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDT451N Features

* 5.5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________________________ D D G D S

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N-Channel MOSFET Fairchild
Fairchild NDT451N-like datasheet