NDT451N Datasheet - Fairchild

NDT451N N-Channel MOSFET

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are part.

NDT451N Features

* 5.5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________________________ D D G D S

NDT451N_FairchildSemiconductor.pdf