NDT451N - N-Channel MOSFET

Fairchild

Datasheet Details

Part number	NDT451N
Manufacturer	Fairchild
File Size	226.48 KB
Description	N-Channel MOSFET
Datasheet	NDT451N_FairchildSemiconductor.pdf

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

5.5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise note.

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Published: May 12, 2005 |