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NDT452P P-Channel Enhancement Mode Field Effect Transistor

NDT452P Description

September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General .
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDT452P Features

* -3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________________________ D D G D S

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Datasheet Details

Part number
NDT452P
Manufacturer
Fairchild
File Size
227.55 KB
Datasheet
NDT452P_FairchildSemiconductor.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

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P-Channel Enhancement Mode Field Effect Transistor Fairchild
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