NDT452P - P-Channel Enhancement Mode Field Effect Transistor

Fairchild

Datasheet Details

Part number	NDT452P
Manufacturer	Fairchild
File Size	227.55 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDT452P_FairchildSemiconductor.pdf

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

-3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise no.

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Published: May 12, 2005 |