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NDT452P

P-Channel Enhancement Mode Field Effect Transistor

NDT452P Features

* -3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________________________ D D G D S

NDT452P General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are part.

NDT452P Datasheet (227.55 KB)

Preview of NDT452P PDF

Datasheet Details

Part number:

NDT452P

Manufacturer:

Fairchild

File Size:

227.55 KB

Description:

P-channel enhancement mode field effect transistor.

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NDT452P P-Channel Enhancement Mode Field Effect Transistor Fairchild

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