NDT452P P-Channel Enhancement Mode Field Effect Transistor

Fairchild

Description

September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General .
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDT452P
Manufacturer: Fairchild
File Size: 227.55 KB
Datasheet: NDT452P_FairchildSemiconductor.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

Features

* -3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________________________ D D G D S

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NDT452P P-Channel Enhancement Mode Field Effect Transistor Fairchild

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