NDT454P Datasheet (Fairchild) - P-Channel Enhancement Mode Field Effect Transistor

NDT454P, P-Channel Enhancement Mode Field Effect Transistor

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are part

NDT454P Features

* -5.9A, -30V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.07Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________