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NDT454P P-Channel Enhancement Mode Field Effect Transistor

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Description

June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor General .
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number
NDT454P
Manufacturer
Fairchild
File Size
92.24 KB
Datasheet
NDT454P_FairchildSemiconductor.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

Features

* -5.9A, -30V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.07Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________

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