NDT2955 - P-Channel Enhancement Mode Field Effect Transistor
NDT2955 Features
* 2.5 A,
* 60 V
* RDS(ON) = 300 mW @ VGS =
* 10 V
* RDS(ON) = 500 mW @ VGS =
* 4.5 V
* High Density Cell Design for Extremely Low RDS(ON).
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
