NDT2955 P-Channel Enhancement Mode Field Effect Transistor

ON Semiconductor

Description

P-Channel Enhancement Mode Field Effect Transistor NDT2955 General .
This 60 V P. Channel MOSFET is produced using onsemi’s high voltage Trench process.

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Datasheet Specifications

Part number: NDT2955
Manufacturer: ON Semiconductor ↗
File Size: 193.59 KB
Datasheet: NDT2955-ONSemiconductor.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

Features

* 2.5 A,
* 60 V
* RDS(ON) = 300 mW @ VGS =
* 10 V
* RDS(ON) = 500 mW @ VGS =
* 4.5 V
* High Density Cell Design for Extremely Low RDS(ON).
* High Power and Current Handling Capability in a Widely Used Surface Mount Package

Applications

* DC/DC Converter
* Power Management ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS ID Drain
* Source Voltage Gate
* Source Voltage Drain Current
* Continuous (Note 1a)
* 60 V ±20 V A
* 2

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NDT2955 P-Channel Enhancement Mode Field Effect Transistor ON Semiconductor

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