NDT2955 - P-Channel Enhancement Mode Field Effect Transistor

ON Semiconductor

Datasheet Details

Part number	NDT2955
Manufacturer	ON Semiconductor
File Size	193.59 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDT2955-ONSemiconductor.pdf

This 60 V P Channel MOSFET is produced using onsemi’s high voltage Trench process.It has been optimized for power management plications.

2.5 A,.
60 V.
RDS(ON) = 300 mW @ VGS =.
10 V.
RDS(ON) = 500 mW @ VGS =.
4.5 V.
High Density Cell Design for Extremely Low RDS(ON).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
This is a Pb.
Free Device.

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Published: Oct 13, 2024 |