NDT3055L Datasheet - ON Semiconductor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDT3055L Features

* 4 A, 60 V

* RDS(ON) = 0.100 W @ VGS = 10 V

* RDS(ON) = 0.120 W @ VGS = 4.5 V

* Low Drive Requirements Allowing Operation Directly from Logic Drivers. VGS(TH) < 2V.

* High Density Cell Design for Extremely Low RDS(ON).

* High Power and Current Handlin

NDT3055L General Description

This Logic Level N *Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on *state resistance and provide superior switching performance, and .

NDT3055L Datasheet (199.13 KB)