Datasheet4U Logo Datasheet4U.com

NDT2955 - P-Channel MOSFET

NDT2955 Description

September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General .
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDT2955 Features

* -2.5A, -60V. RDS(ON) = 0.3Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________________________ D D G D S G

📥 Download Datasheet

Preview of NDT2955 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • NDT28P - 2Gb (x8) DDR3L Synchronous DRAM (Insignis)
  • NDT014 - N-Channel MOSFET (VBsemi)
  • NDT01N60 - N-Channel Power MOSFET (ON Semiconductor)
  • NDT01N60T1G - N-Channel Power MOSFET (ON Semiconductor)
  • NDT02N40 - N-Channel Power MOSFET (ON Semiconductor)
  • NDT02N60Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDT03N40Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDT3055L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (ON Semiconductor)

📌 All Tags

P-Channel MOSFET Fairchild
Fairchild NDT2955-like datasheet