NDT453N N-Channel Enhancement Mode Field Effect Transistor

Fairchild

Description

September 1996 NDT453N N-Channel Enhancement Mode Field Effect Transistor General .
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDT453N
Manufacturer: Fairchild
File Size: 226.50 KB
Datasheet: NDT453N_FairchildSemiconductor.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 8A, 30V. RDS(ON) = 0.028Ω @ VGS = 10V. RDS(ON) = 0.042Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ D

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NDT453N N-Channel Enhancement Mode Field Effect Transistor Fairchild

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