NDT453N - N-Channel Enhancement Mode Field Effect Transistor

Fairchild

Datasheet Details

Part number	NDT453N
Manufacturer	Fairchild
File Size	226.50 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDT453N_FairchildSemiconductor.pdf

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

8A, 30V. RDS(ON) = 0.028Ω @ VGS = 10V. RDS(ON) = 0.042Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A= 25°C unless o.

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Published: May 12, 2005 |