NDT453N Datasheet - Fairchild

NDT453N N-Channel Enhancement Mode Field Effect Transistor

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are part.

NDT453N Features

* 8A, 30V. RDS(ON) = 0.028Ω @ VGS = 10V. RDS(ON) = 0.042Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ D

NDT453N_FairchildSemiconductor.pdf