20N60A4D - HGTG20N60A4D

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Fairchild Semiconductor

Part number	20N60A4D
Manufacturer	Fairchild Semiconductor
File Size	175.11 KB
Description	HGTG20N60A4D
Datasheet	20N60A4D Datasheet
Additional preview pages of the 20N60A4D datasheet.

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. This IGBT is ideal for many high voltage switching.

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Published: Jan 29, 2014 |