20a 600v n-channel enhancement mode power mosfet.
* Fast Switching
* Low On Resistance(Rdson≤0.45Ω)
* Low Gate Charge(Typical:61nC)
* Low Reverse Transfer Capacitances(Typical:20pF)
* 100% Single Puls.
These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F. Which accords with the RoHS sta.
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