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20N60 Datasheet Preview

20N60 Datasheet

20A 600V N-channel Enhancement Mode Power MOSFET

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20N60/F20N60/20N60D
20A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel Enhanced VDMOSFETs are
obtained by the self-aligned planar Technology which
reduce the conduction loss,improve switching performance
and enhance the avalanche energy.The package form is
TO-220F. Which accords with the RoHS standard.
VDSS = 600V
RDS(on) TYP)= 0.36Ω
ID = 20A
2 Features
● Fast Switching
● Low On Resistance(Rdson≤0.45Ω)
● Low Gate Charge(Typical:61nC)
● Low Reverse Transfer Capacitances(Typical:20pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Application
● Used in various power switching circuit for system
miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
TO-220C
TO-220F
TO-3PN
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25,unless otherwise noted)
PARAMETER
Maximum Drian-Source DC Voltage
Maximum Gate-Drain Voltage
Drain Current(continuous)
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche Energy(Note 5)
Peak Diode Recovery dv/dt(Note 6)
Total Dissipation
Ta=25
TC=25
Junction Temperature
storage Temperature
High Temperature(tin solder)
SYMBOL
VDS
VGS
ID (T=25℃)
(T=100℃)
IDM
EAS
dv/dt
Ptot
Ptot
Tj
Tstg
TL
20N60
2
250
VALUE
F20N60 20N60D
600
±30
20
14
80
1200
5
2
85
150
-55150
300
3
250
UNIT
V
V
A
A
A
mJ
V/ns
W
W
4.2 Thermal Characteristics
PARAMETER
Thermal Resistance Junction to Case-sink
Thermal Resistance Junction to Ambient
SYMBOL
RthJC
RthJA
20N60
0.5
62.5
VALUE
F20N60
1.47
62.5
20N60D
0.5
41.7
UNIT
/W
/W
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
Page 1 of 11
Rev. 1.0




ROUM

20N60 Datasheet Preview

20N60 Datasheet

20A 600V N-channel Enhancement Mode Power MOSFET

No Preview Available !

20N60/F20N60/20N60D
4.3 Electrical Characteristics(Tc=25,unless otherwise noted)
PARAMETER
SYMBOL
Test Condition
Off Characteristics
Drain-source Breakdown
Voltage
BVDSS
ID=250μA,VGS=0V
Drain-to-Source Leakage
Current
IDSS
VDS=600V,VGS=0V,TC=25
VDS=480V,VGS=0V,TC=125
Gate-to-Source Forward
Leakage
IGSSF
VGS=+30V
Gate-to-Source Reverse
Leakage
IGSSR
VGS=-30V
On Characteristics(Note 3)
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-source on Resista
nce(Note 1)
RDS(on)
VGS=10V,ID=10A
Dynamic Characteristics(Note 4)
Forword
Transconductance
gfs VDS=15V,ID=10A
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capac
itance
Coss
Crss
VGS=0V,VDS=25V,f=1.0MHz
Switching Characteristics(note4)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
td(on)
tr
td(off)
tf
ID=20A,
VDD=300V,
RG=25Ω
Total Gate Charge
Qg
Gate-to-Source Charge
Gate-to-Drain(“Miller”)Ch
arge
Qgs
Qgd
ID=20A,VDD=300V,VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage(N
ote 3)
VFSD
VGS=0V,IS=20A
Diode Forward Current(N
ote 2)
IS
Reverse Recovery Time
Reverse Recovery
Charge
trr
Qrr
TJ=25,IF=20A,
dIF/dt=100A/μS,VGS=0V
VALUE
MIN TYP MAX
600 --
--
-- -- 1
-- -- 100
-- -- 100
-- -- -100
2.0 -- 4.0
-- 0.36 0.45
-- 17
-- 2847
-- 252
-- 20
--
--
--
--
-- 36 --
-- 73 --
-- 166 --
-- 73 --
-- 61 --
-- 14 --
-- 24 --
-- -- 1.5
-- -- 20
-- 425 --
-- 3700 --
UNIT
V
μA
μA
nA
nA
V
Ω
S
pF
nS
nS
nS
nS
nC
V
A
nS
nC
Notes
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5: L=10mH,ID=15.5A,VDD=50V,VGATE=600V,Start TJ=25.
6. ISD=20A,di/dt≤200A/μs,VDD≤BVDSS, Start TJ=25.
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
Page 2 of 11
Rev. 1.0


Part Number 20N60
Description 20A 600V N-channel Enhancement Mode Power MOSFET
Maker ROUM
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