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20N60A - IGBT (IXYS)
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.

20N60A4D - HGTG20N60A4D (Fairchild Semiconductor)
HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltag.

20N60B - IGBT (IXYS Corporation)
HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE(sat)typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol VCES VCGR VGES VG.

20N60BD1 - IGBT (IXYS Corporation)
HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol .

20N60C2 - Power Transistor (Infineon Technologies)
Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on.

20N60C3 - N-Channel IGBT (Intersil Corporation)
Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig.

20N60C5 - Power MOSFET (IXYS)
IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 20 A VDSS =.

20N60CFD - Cool MOS Power Transistor (Infineon)
0MMJ!57;W 8MTCO!

20N60D - 20A 600V N-channel Enhancement Mode Power MOSFET (ROUM)
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.

20N60K-MK - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 20N60K-MT 20A, 600V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 20N60K-MT is an N-channel Power MOSFET using UTC.