20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number: 20N60
Manufacturer: ROUM
File Size: 1.14 MB
Datasheet: 20N60-ROUM.pdf
Description: 20A 600V N-channel Enhancement Mode Power MOSFET

20N60 Product details

Description

These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F..

Features

Fast Switching.
Low On Resistance(Rdson≤0.45Ω).
Low Gate Charge(Typical:61nC).
Low Reverse Transfer Capacitances(Typical:20pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3 Application.
Used in various power switching circuit for system miniaturization and higher efficiency.
Power switch circuit of adaptor and charger. TO-220C TO-220F TO-3PN 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted).

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20A 600V N-channel Enhancement Mode Power MOSFET ROUM

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