20N60 Datasheet | Specifications & PDF Download

Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig

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20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel

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UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using

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Preliminary Technical Information GenX3TM 600V IGBTs IXGK320N60B3 IXGX320N60B3 VCES = IC90 = VCE(sat) ≤ 600V 320A 1.6V Medium-Speed Low-Vsat PT I

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Preliminary Technical Information GenX3TM 600V IGBTs IXGK320N60B3 IXGX320N60B3 VCES = IC90 = VCE(sat) ≤ 600V 320A 1.6V Medium-Speed Low-Vsat PT I

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SSB20N60S-VB www.VBsemi.com SSB20N60S-VB Datasheet N-Channel 600V (D-S)Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at

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IXDP 20N60B D1 High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage VCES = 600 V IC25 = 32 A V = CE(sat) typ 2.2 V C TO-220

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Xiner XNF20N60T 600V，20A，Trench-FS IGBT Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typi

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Data Sheet HGTG20N60B3 October 2004 40A, 600V, UFS Series N-Channel IGBTs The HGTG20N60B3 is a Generation III MOS gated high voltage switching devic

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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Silan Microelectronics SVSP20N60FJD(K)(T)(PN)(S)(P7)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVSP20N60FJD(K)(T

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Silan Microelectronics SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS20N60FJ(K)(T)

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Silan Microelectronics SVSP20N60FJD(K)(T)(PN)(S)(P7)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVSP20N60FJD(K)(T

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Silan Microelectronics SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS20N60FJ(K)(T)

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Silan Microelectronics SVSP20N60FJD(K)(T)(PN)(S)(P7)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVSP20N60FJD(K)(T

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Silan Microelectronics SVSP20N60FJD(K)(T)(PN)(S)(P7)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVSP20N60FJD(K)(T

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HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high vo

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Silan Microelectronics SVSP20N60FJD(K)(T)(PN)(S)(P7)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVSP20N60FJD(K)(T

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