20N60 Datasheet | Specifications & PDF Download

Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig

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20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel

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Xiner XNF20N60T 600V，20A，Trench-FS IGBT Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typi

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Data Sheet HGTG20N60B3 October 2004 40A, 600V, UFS Series N-Channel IGBTs The HGTG20N60B3 is a Generation III MOS gated high voltage switching devic

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UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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PFJ20N60 / PFW20N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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SJTA20N60A Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 600V Lead Free Package and Finish RDS(ON)(Typ.) 0.17Ω ID 20A Feat

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FMP20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1

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Description JMP N-channel MOSFET Features  600V,20A  RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A  Fast Switching  Improved dv/dt Capability  100%

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 600 V 600 V ID25 15 A

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances IXFH 20N60Q IXFT 20N60Q VD

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GenX3TM A3-Class IGBTS Ultra-Low Vsat PT IGBTs for up to 5kHz Switching IXGK120N60A3* IXGX120N60A3 *Obsolete Part Number Symbol VCES VCGR VGES VGEM

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic a

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-3 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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HiPerFASTTM IGBT IXGR 120N60B ISOPLUS247TM (Electrically Isolated Back Surface) V= CES IC25 = = VCE(sat) 600 V 156 A 2.1 V Symbol Test Conditions

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