20N60/F20N60/20N60D 20A 600V N-channel Enhancement.
20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.20N60 - 600V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using .20N60C3 - N-Channel IGBT
Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig.XNF20N60T - Trench-FS IGBT
Xiner XNF20N60T 600V,20A,Trench-FS IGBT Features Advanced Trench+FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typi.FHP20N60 - N-Channel MOSFET
')1/')'/ Ӂ૭ඍ /ູ/֡ᄹ఼ۚੱۿӆིႋܵb ھӁܼٗൡႨႿ"$%$षܱჷđ%$%$ ჷሇߐఖđۚ)ూ1.8ઔղ౺b Ӂหׄ " 7 3%4 PO Ȥ NBY !7.20N60A4D - HGTG20N60A4D
HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltag.FQPF20N60 - 20A N-Channel MOSFET
FQP20N60/FQPF20N60 600V,20A N-Channel MOSFET General Description Product Summary The FQP20N60 & FQPF20N60 have been fabricated using an advanced hi.20N60S5 - Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic a.HG20N60B3 - 40A 600V UFS Series N-Channel IGBT
Data Sheet HGTG20N60B3 October 2004 40A, 600V, UFS Series N-Channel IGBTs The HGTG20N60B3 is a Generation III MOS gated high voltage switching devic.FHF20N60 - N-Channel MOSFET
')1/')'/ Ӂ૭ඍ /ູ/֡ᄹ఼ۚੱۿӆིႋܵb ھӁܼٗൡႨႿ"$%$षܱჷđ%$%$ ჷሇߐఖđۚ)ూ1.8ઔղ౺b Ӂหׄ " 7 3%4 PO Ȥ NBY !7.CS20N60ANH - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS20N60 ANH ○R General Description: CS20N60 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.20N60 - IGBT
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.FQP20N60 - 20A N-Channel MOSFET
FQP20N60/FQPF20N60 600V,20A N-Channel MOSFET General Description Product Summary The FQP20N60 & FQPF20N60 have been fabricated using an advanced hi.HGTP20N60C3R - N-Channel IGBTs
POSSOIBBLSEOHSLGUETBTGTSEM2TP0ITNRU6OT0DECDU3PaCtRTaOSDhUeCeTt HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS June 2000 File Number 4226.2 [ /Title (HGT.HGT1S20N60C3S - N-Channel IGBT
Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S December 2001 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switchin.CS20N60A8H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS20N60 A8H ○R General Description: CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.20N60S1 - N-Channel enhancement mode power MOSFET
FMP20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1.WFW20N60 - N-Channel MOSFET
Wisdom Semiconductor WFW20N60 N-Channel MOSFET Features ■ RDS(on) (Typical 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 80nC) ■ Improved dv/dt Capabilit.IXKC20N60C - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 190mΩ@VGS=10V ·100% avalanche tested .