20N60 Datasheet | Specifications & PDF Download

Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig

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20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel

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UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using

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SSP20N60S / SSF20N60S 600V N-Channel MOSFET September, 2012 SJ-FET SSP20N60S / SSF20N60S 600V N-Channel MOSFET Description SJ-FET is new generation

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N N- CHANNEL MOSFET R JCS20N60CAH MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 20 A 600 V 0.39Ω 50nC Package z z z UPS APPLICATIONS z

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HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP2

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HGTG20N60C3D Data Sheet January 2000 File Number 4494.2 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a

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FQP20N60/FQPF20N60 600V,20A N-Channel MOSFET General Description Product Summary The FQP20N60 & FQPF20N60 have been fabricated using an advanced hi

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MOSFET – N-Channel, SuperFET) 600 V, 20 A, 190 mW FCP20N60, FCPF20N60 Description SuperFET MOSFET is onsemi’s first generation of high voltage super−j

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Xiner XNA20N60T 600V，20A，Trench-FS IGBT Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typi

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POSSOIBBLSEOHSLGUETBTGTSEM2TP0ITNRU6OT0DECDU3PaCtRTaOSDhUeCeTt HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS June 2000 File Number 4226.2 [ /Title (HGT

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Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S December 2001 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switchin

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FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET August 2014 FCP20N60 / FCPF20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features • 650V @

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HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high vo

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Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on

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HiPerFASTTM IGBTs IXGK120N60B* IXGX120N60B *Obsolete Part Number VCES = IC90 = VCE(sat) ≤ 600V 120A 2.1V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM

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FCB20N60 — N-Channel SuperFET® MOSFET FCB20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features • 650 V @TJ = 150 °C • Typ. RDS(on) = 150 m

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FMV20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features

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