Datasheet4U Logo Datasheet4U.com

20N60 Datasheet - IXYS

20N60 IGBT

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions Maximum Ratings VCES V CGR VGES V GEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C T C = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH P C TJ TJM T stg Md Weight T C = 25°C Mounting torque (M3) Maximum lead temperatu.

20N60 Features

* l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) Applications l AC motor speed control l DC servo a

20N60 Datasheet (61.12 KB)

Preview of 20N60 PDF
20N60 Datasheet Preview Page 2

Datasheet Details

Part number:

20N60

Manufacturer:

IXYS

File Size:

61.12 KB

Description:

Igbt.

📁 Related Datasheet

20N60 20A 600V N-channel Enhancement Mode Power MOSFET (ROUM)

20N60 600V N-CHANNEL POWER MOSFET (UTC)

20N60 N-Channel MOSFET (VBsemi)

20N60 N-Channel MOSFET (ON Semiconductor)

20N60A IGBT (IXYS)

20N60A N-channel MOSFET (JieJie)

20N60A4D HGTG20N60A4D (Fairchild Semiconductor)

20N60A4D N-Channel IGBT (ON Semiconductor)

TAGS

20N60 IGBT IXYS

20N60 Distributor