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20N60A4D Datasheet N-Channel IGBT

Manufacturer: onsemi

Overview: SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D The HGTG20N60A4D is a MOS gated high voltage switching device combining the.

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Datasheet Details

Part number	20N60A4D
Manufacturer	onsemi
File Size	381.10 KB
Description	N-Channel IGBT
Download	20N60A4D Download (PDF)

Key Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on.
state conduction loss of a bipolar transistor. The much lower on.
state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti.
parallel is the development type TA49372. This IGBT is ideal for many high voltage switching.

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