* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. Th
20N60A4D Datasheet (381.10 KB)
20N60A4D
381.10 KB
N-channel igbt.
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D The HGTG20N60A4D is a MOS gated high voltage switching device combini.
📁 Related Datasheet
20N60A4D HGTG20N60A4D (Fairchild Semiconductor)
20N60A IGBT (IXYS)
20N60A N-channel MOSFET (JieJie)
20N60 20A 600V N-channel Enhancement Mode Power MOSFET (ROUM)
20N60 IGBT (IXYS)
20N60 600V N-CHANNEL POWER MOSFET (UTC)
20N60 N-Channel MOSFET (VBsemi)
20N60 N-Channel MOSFET (ON Semiconductor)
20N60B IGBT (IXYS Corporation)
20N60BD1 IGBT (IXYS Corporation)
