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20N60A4D Datasheet

N-Channel IGBT

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SMPS Series N-Channel
IGBT with Anti-Parallel
Hyperfast Diode
600 V
HGTG20N60A4D
The HGTG20N60A4D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a MOSFET
and the low onstate conduction loss of a bipolar transistor. The much
lower onstate voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49339. The diode
used in antiparallel is the development type TA49372.
This IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses are
essential. This device has been optimized for high frequency switch
mode power supplies.
Formerly Developmental Type TA49341.
Features
>100 kHz Operation 390 V, 20 A
200 kHz Operation 390 V, 12 A
600 V Switching SOA Capability
Typical Fall Time 55 ns at TJ = 125°C
Low Conduction Loss
Temperature Compensating SaberModel
This is a PbFree Device
www.onsemi.com
C
G
E
EC
G
COLLECTOR
(FLANGE)
TO2473LD SHORT LEAD
CASE 340CK
JEDEC STYLE
MARKING DIAGRAM
$Y&Z&3&K
20N60A4D
$Y
&Z
&3
&K
20N60A4D
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
April, 2020 Rev. 3
Publication Order Number:
HGTG20N60A4D/D


  ON Semiconductor Electronic Components Datasheet  

20N60A4D Datasheet

N-Channel IGBT

No Preview Available !

HGTG20N60A4D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Parameter
Symbol HGTG20N60A4D Unit
Collector to Emitter Voltage
BVCES
600
V
Collector Current Continuous
At TC = 25°C
At TC = 110°C
IC25
70
A
IC110
40
A
Collector Current Pulsed (Note 1)
Diode Continuous Forward Current
ICM
280
A
IFM110
20
A
Diode Maximum Forward Current
IFM
80
A
Gate to Emitter Voltage Continuous
VGES
±20
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
Switching Safe Operating Area at TJ = 150°C, (Figure 2)
SSOA
100 A at 600 V
Power Dissipation Total at TC = 25°C
PD
290
W
Power Dissipation Derating TC > 25°C
2.32
W/°C
Operating and Storage Junction Temperature Range
TJ, TSTG
55 to 150
°C
Maximum Lead Temperature for Soldering
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES IC = 250 mA, VGE = 0 V
600
ICES
VCE = 600 V
TJ = 25°C
TJ = 125°C
VCE(SAT) IC = 20 A, VGE = 15 V
TJ = 25°C
TJ = 125°C
VGE(TH) IC = 250 mA, VCE = 600 V
4.5
IGES
VGE = ±20 V
SSOA TJ = 150°C, RG = 3 W, VGE = 15 V,
100
L = 100 mH, VCE = 600 V
Gate to Emitter Plateau Voltage
OnState Gate Charge
Current TurnOn Delay Time
Current Rise Time
Current TurnOff Delay Time
Current Fall Time
TurnOn Energy (Note 3)
TurnOn Energy (Note 3)
TurnOff Energy (Note 2)
Current TurnOn Delay Time
Current Rise Time
Current TurnOff Delay Time
Current Fall Time
TurnOn Energy (Note 3)
TurnOn Energy (Note 3)
TurnOff Energy (Note 2)
VGEP
IC = 20 A, VCE = 300 V
Qg(ON) IC = 20 A, VCE = 300 V VGE = 15 V
VGE = 20 V
td(ON)I IGBT and Diode at TJ = 25°C,
trI
ICE = 20 A,
VCE = 390 V,
td(OFF)I
VGE = 15 V,
RG = 3 W,
tfI
L = 500 mH,
EON1
Test Circuit Figure 24
EON2
EOFF
td(ON)I IGBT and Diode at TJ = 125°C,
trI
ICE = 20 A,
VCE = 390 V,
td(OFF)I
VGE = 15 V,
RG = 3 W,
tfI
L = 500 mH,
EON1
Test Circuit Figure 24
EON2
EOFF
Typ
Max
Unit
V
250
mA
2.0
mA
1.8
2.7
V
1.6
2.0
V
5.5
7.0
V
±250
nA
A
8.6
V
142
162
nC
182
210
nC
15
ns
12
ns
73
ns
32
ns
105
mJ
280
350
mJ
150
200
mJ
15
21
ns
13
18
ns
105
135
ns
55
73
ns
115
mJ
510
600
mJ
330
500
mJ
www.onsemi.com
2


Part Number 20N60A4D
Description N-Channel IGBT
Maker ON Semiconductor
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