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20N60A4D - N-Channel IGBT

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ON Semiconductor

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20N60A4D N-Channel IGBT by ON Semiconductor - Datasheet Preview — Datasheet preview – 20N60A4D

Datasheet Details

Part number	20N60A4D
Manufacturer	ON Semiconductor
File Size	381.10 KB
Description	N-Channel IGBT
Datasheet	20N60A4D Datasheet
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Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on.
state conduction loss of a bipolar transistor. The much lower on.
state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti.
parallel is the development type TA49372. This IGBT is ideal for many high voltage switching.

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Published: Dec 19, 2020 |