2N7000TA Datasheet | Fairchild Semiconductor

Features - Fast Switching Times - Improved Inductive Ruggedness - Lower Input Capacitance - Extended Safe Operating Area - Improved High-Temperature Reliability Description These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 m A DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. 1 TO-92 1. Source 2. Gate 3. Drain Ordering Information Part Number 2N7000BU 2N7000TA Marking 2N7000 2N7000 Package TO-92 3L TO-92 3L Packing Method Bulk Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the remended operating conditions and stressing the parts to these levels is not remended. In addition, extended exposure to stresses above the remended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol VDSS IDM VGS TJ, TSTG Parameter Drain-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Drain Current Pulsed(1) Gate-to-Source Voltage Operating Junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8-inch from Case for 5 Seconds Value 60 200 110 1000 ±30 -55 to 150 Unit V m A m A V °C °C Note: 1. Repetitive rating: pulse width limited by maximum junction temperature. © 2002 Fairchild Semiconductor Corporation 2N7000BU / 2N7000TA Rev. 1.5 .fairchildsemi. 2N7000BU / 2N7000TA - Advanced Small-Signal MOSFET Thermal Characteristics(2) Values are at TC = 25°C unless...