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Fairchild Semiconductor Electronic Components Datasheet

4435 Datasheet

P-Channel MOSFET

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October 2001
FDS4435
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
Power management
Load switch
Battery protection
Features
–8.8 A, –30 V
RDS(ON) = 20 m@ VGS = –10 V
RDS(ON) = 35 m@ VGS = –4.5 V
Low gate charge (17nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1SO-8 SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4435
FDS4435
13’’
©2001 Fairchild Semiconductor Corporation
5
4
6
3
7
2
8
1
Ratings
–30
±25
–8.8
–50
2.5
1.2
1
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
FDS4435 Rev F1(W)


Fairchild Semiconductor Electronic Components Datasheet

4435 Datasheet

P-Channel MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA
–30
V
BV DSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA, Referenced to 25°C
VDS = –24 V, VGS = 0 V
–21
mV/°C
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 25 V, VDS = 0 V
100 nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –25 V, VDS = 0 V
–100 nA
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
V GS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = –250 µA
–1 –1.7 –3
V
ID = –250 µA, Referenced to 25°C
5
mV/°C
VGS = –10 V, ID = –8.8 A
VGS = –4.5 V, ID = –6.7 A
VGS= –10 V, ID = –8.8A, TJ=125°C
15 20 m
22 35
19 32
VGS = –10 V, VDS = –5 V
–50
A
VDS = –5 V,
ID = –8.8 A
24
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
1604
pF
408
pF
202
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6
VDS = –15 V, ID = –8.8 A,
VGS = –5 V
13 23
ns
13.5 24
ns
42 68
ns
25 40
ns
17 24
nC
5
nC
6
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –2.1 A (Note 2)
–2.1 A
–0.73 –1.2 V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCAis determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4435 Rev F1(W)


Part Number 4435
Description P-Channel MOSFET
Maker Fairchild Semiconductor
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4435 Datasheet PDF






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