4435 Datasheet | Specifications & PDF Download

 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel 30-V (D-S) MOSFET 4435 PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.020 @ VGS = −10 V −30

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APM4435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5

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www.DataSheet.co.kr ME4435 P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4435 is the P-Channel logic enhancement mode power field effect tran

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PE4435 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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MSL4435A Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET Features: □ Advanced high cell density Trench technology □ E

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P-Channel Enhancement Mode Power MOSFET Description The PE4435A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c

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FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ Features „ Max rDS(

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30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-9.1A = 21m RDS(ON), Vgs@-4.5V, Ids@-6.9A = 35m Advanced trench process technolo

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MSP4435W -30V(D-S) P-Channel Enhancement Mode Power MOS FET GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS

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NCE4435 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate c

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Features ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4435 P-Channel Enhancement MOSFET Si4435 Package Dimensions Specifications Absolute

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P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE4435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and oper

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FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -

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Mos-Tech Semiconductor Co.,LTD. MT4435A P-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON)

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MT4435 P- Channel Enhancement Mode MOSFET ‹ DESCRIPTION The MT4435 MOSFET from MATRIX provide the designer with the best combination of fast switching

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CYStech Electronics Corp. Spec. No. : C107Q8 Issued Date : 2015.08.14 Revised Date : 2015.08.18 Page No. : 1/9 P-Channel Enhancement Mode Power MOSF

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CEM4435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 33mΩ @VGS = -4.5V. Super high de

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AO4435 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS = -30V ID = -10A (VGS = -10V)

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AP4435GM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ Ro

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