FDS4435 October 2001 FDS4435 30V P-Channel Power.
Advanced Power Electronics
AP4435 - 30 P-Channel Enhancement-Mode MOSFET
30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-9.1A = 21m RDS(ON), Vgs@-4.5V, Ids@-6.9A = 35m Advanced trench process technolo.
CXW
4435 - P-Channel MOSFET
P-channel Enhancement Mode MOSFET The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This.
ON Semiconductor
FDS4435BZ - P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW FDS4435BZ Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH pro.
Chino-Excel Technology
CEM4435 - P-Channel Enhancement Mode Field Effect Transistor
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SAFT
MP144350 - High performance Medium Prismatic cell
Rechargeable lithium-ion battery MP 144350 .
CET
CEM4435A - P-Channel Enhancement Mode Field Effect Transistor
CEM4435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 33mΩ @VGS = -4.5V. Super high de.
Taiwan Semiconductor Company
TSM4435 - 30V P-Channel MOSFET
www.DataSheet4U.com TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 21 @ VGS = -10V 35 @ VGS = -4.5V SOP-8 Pin Definition: 1..
Motorola
MC44355 - PLL Tuned UHF Audio/Viceo Modulator ICs
Order this document by MC44353/D Advance Information PLL Tuned UHF Audio/Video Modulator ICs for PAL, SECAM and NTSC TV Systems MC44353 – Multi–Stand.
Taiwan Semiconductor
TSM4435B - 30V P-Channel MOSFET
TSM4435B 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS (V).
Advanced Power Electronics
AP4435GJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4435GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G.
Anpec Electronics Coropration
APM4435 - P-Channel MOSFET
APM4435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5.
Tuofeng Semiconductor
4435 - P-Channel MOSFET
Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel 30-V (D-S) MOSFET 4435 PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.020 @ VGS = −10 V −30 .
JIEJIE
4435 - P-channel Enhancement Mode Power MOSFET
JMTP4435A Description JMT P-channel Enhancement Mode Power MOSFET Features VDS=-30V, ID=-10A RDS(ON) <23mΩ @ VGS = -10V RDS(ON) <34mΩ @ VGS = -4..
Coilcraft
Q4435-BL - Magnetics
Document 183-1 Magnetics for LM258x Flyback Regulator These standard flyback regulator transformers are designed for use with Texas Instruments LM258.
Alfa-MOS
AFP4435W - P-Channel MOSFET
Alfa-MOS Technology General Description AFP4435W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
Alfa-MOS
AFP4435WS - 30V P-Channel Enhancement Mode MOSFET
Alfa-MOS Technology General Description AFP4435WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.
Fairchild Semiconductor
FDS4435 - P-Channel MOSFET
FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semi.
CITC
MSL4435A - P-Channel Enhancement Mode MOSFET
MSL4435A Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET Features: □ Advanced high cell density Trench technology □ E.
Fairchild Semiconductor
FDMC4435BZ - MOSFET
FDMC4435BZ P-Channel Power Trench® MOSFET FDMC4435BZ P-Channel Power Trench® MOSFET -30 V, -18 A, 20 mΩ November 2015 Features General Description.
Micro Linear
ML4435 - Sensorless BLDC Motor Controller
PRELIMINARY ML4435 Sensorless BLDC Motor Controller GENERAL DESCRIPTION The ML4435 provides all the circuitry for sensorless speed control of 3 phase .