4435 Datasheet | Specifications & PDF Download

 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This

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MSL4435A Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET Features: □ Advanced high cell density Trench technology □ E

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APM4435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel 30-V (D-S) MOSFET 4435 PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.020 @ VGS = −10 V −30

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AP4435GM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ Ro

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AO4435 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS = -30V ID = -10A (VGS = -10V)

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FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semi

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FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ Features „ Max rDS(

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MOSFET – P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW FDS4435BZ Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH pro

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FDMC4435BZ P-Channel Power Trench® MOSFET FDMC4435BZ P-Channel Power Trench® MOSFET -30 V, -18 A, 20 mΩ November 2015 Features General Description

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30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-9.1A = 21m RDS(ON), Vgs@-4.5V, Ids@-6.9A = 35m Advanced trench process technolo

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www.DataSheet.co.kr ME4435 P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4435 is the P-Channel logic enhancement mode power field effect tran

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FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -

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Advanced Power Electronics Corp. AP4435GYT-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Good Thermal Performance Low On-res

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JMTP4435A Description JMT P-channel Enhancement Mode Power MOSFET Features  VDS=-30V, ID=-10A RDS(ON) <23mΩ @ VGS = -10V RDS(ON) <34mΩ @ VGS = -4.

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GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description GSM4435S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to pr

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WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT -8 AMPERES DRAIN SOURCE VOLTAGE D G 4 5 D 1 2 3 S S S 8 7

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www.DataSheet.co.kr ME4435(-G) P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4435 is the P-Channel logic enhancement mode power field effect t

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NEW PRODUCT Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Complia

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