4435 Datasheet | Specifications & PDF Download

 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This

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WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT -8 AMPERES DRAIN SOURCE VOLTAGE D G 4 5 D 1 2 3 S S S 8 7

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FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -

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SSMMDD TTyyppee ■ Features ● VDS=-30V ● RDS(on)=0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 MOSFET 1.50 0.1

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IM4435G-VB IM4435G-VB Datasheet P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.02

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www.vishay.com Si4435FDY Vishay Siliconix P-Channel 30 V (D-S) MOSFET SO-8 Single D D5 D6 D7 8 FEATURES • TrenchFET® Gen III p-channel power MOSF

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VBZA4435 P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.024 at VGS = - 4.5 V ID

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FDS4435-NL-VB FDS4435-NL-VB Datasheet P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V

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GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description GSM4435S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to pr

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FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semi

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PD- 93768A Si4435DY HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S 1 8 7 A D D D

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Mos-Tech Semiconductor Co.,LTD. MT4435L2 P-Channel Enhancement Mode Field Effect Transistor FEATURES ● ● ● ● Super high dense cell design for low

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APM4435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5

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SI4435DY December 2018 SI4435DY 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild S

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FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semi

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JMTP4435A Description JMT P-channel Enhancement Mode Power MOSFET Features  VDS=-30V, ID=-10A RDS(ON) <23mΩ @ VGS = -10V RDS(ON) <34mΩ @ VGS = -4.

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Features P-CH: -30V/-7.8A,RDS(ON)=18mΩ Low On-Resistance Fast Switching Lead-Free，Green Product VS4435AS -30V/-7.8A P Channel Advanced Power MOSF

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MSL4435A Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET Features: □ Advanced high cell density Trench technology □ E

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CYStech Electronics Corp. Spec. No. : C107J3 Issued Date : 2015.12.15 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTP4435

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AO4435 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS = -30V ID = -10A (VGS = -10V)

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