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FCPF380N60 Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FCP380N60 / FCPF380N60 N-Channel MOSFET March 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET® II MOSFET 600 V, 10.

Download the FCPF380N60 datasheet PDF. This datasheet also includes the FCP380N60 variant, as both parts are published together in a single manufacturer document.

General Description

SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

Applications • LCD / LED / PDP TV Lighting • Solar Inverter • AC-DC Power Supply D G TO-220 G D S GD S TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC 106 0.85 -55 to +150 300 -DC -AC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) (f >1 HZ) 10.2 6.4 30.6 211.6 2.3 1.06 20 100 31 0.25 FCP380N60 FCPF380N60 600 ±20 ±30 10.2* 6.4* 30.6* Unit V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink (Typical) Thermal Resistance, Junction to Ambient 1 FCP380N60 FCPF380N60 1.18 0.5 62

Key Features

  • 650 V @TJ = 150°C.
  • Max. RDS(on) = 380 mΩ.
  • Ultra low gate charge (typ. Qg = 30 nC).
  • Low effective output capacitance (typ. Coss. eff = 95 pF).
  • 100% avalanche tested.