FDB3860 Description
This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications DC-AC Conversion Synchronous Rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
FDB3860 Key Features
- Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A
- High performance trench technology for extremely low rDS(on)
- 100% UIL tested
- RoHS pliant