FDB3860 datasheet, mosfet equivalent, Fairchild Semiconductor

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FDB3860 Features and benefits

* Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A
* High performance trench technology for extremely low rDS(on)
* 100% UIL tested
* RoHS Compliant General.

FDB3860 Application

Applications
* DC-AC Conversion
* Synchronous Rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum R.

FDB3860 Description

This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applica.

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