Datasheet Details
| Part number | FDB3860 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 346.44 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDB3860_FairchildSemiconductor.pdf |
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Overview: FDB3860 N-Channel PowerTrench® MOSFET March 2009 FDB3860 N-Channel PowerTrench® MOSFET 100 V, 30 A, 37.
| Part number | FDB3860 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 346.44 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDB3860_FairchildSemiconductor.pdf |
|
|
|
This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process.
This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.
Applications DC-AC Conversion Synchronous Rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted ..
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