25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuit.

as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace sever.

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This de.

FDC6302P

FDC6303N

FDC6304P

FDC6305N

FDC6306P

FDC6308P

FDC6310P

FDC6312P

FDC6318P

FDC6320C

FDC6321C

FDC6322C

FDC6323L