p-channel 1.8v powertrench mosfet.
*
–8 A,
–20 V RDS(ON) = 20 mΩ @ VGS =
–4.5 V RDS(ON) = 25 mΩ @ VGS =
–2.5 V RDS(ON) = 35 mΩ @ VGS =
Features
*
–8 A,
–20 V RDS(ON) = 20 mΩ @ VGS =
–4.5 V RDS(ON) = 25.
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.
Features
*
–8 A,
–20 V RDS(ON) = 20 mΩ @ VGS =
.
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