FDC602P
Overview
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
- -5.5 A, -20 V RDS(ON) = 35 mΩ @ VGS = -4.5 V RDS(ON) = 50 mΩ @ VGS = -2.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON) S
- D SuperSOT TM-6 G
