FDC602P Datasheet, Fairchild Semiconductor

*
  –5.5 A,
  –20 V RDS(ON) = 35 mΩ @ VGS =
  –4.5 V RDS(ON) = 50 mΩ @ VGS =
  –2.5 V
* Fast switching spe.

with a wide range of gate drive voltage (2.5V
  – 12V). Applications
* Battery management
* Load s.

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V
  – 12V). Applications