FDC6036P
Overview
This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
- -5 A, -20 V. RDS(ON) = 44 mΩ @ VGS = -4.5 V RDS(ON) = 64 mΩ @ VGS = -2.5 V RDS(ON) = 95 mΩ @ VGS = -1.8 V
- Low gate charge, High Power and Current handling capability
- High performance trench technology for extremely low RDS(ON)
- FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact
