FDC6036P Datasheet | Fairchild Semiconductor

Description This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Features - - 5 A, - 20 V. RDS(ON) = 44 mΩ @ VGS = - 4.5 V RDS(ON) = 64 mΩ @ VGS = - 2.5 V RDS(ON) = 95 mΩ @ VGS = - 1.8 V - Low gate charge, High Power and Current handling capability - High performance trench technology for extremely low RDS(ON) - FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact Applications - Battery management/Charger Application - Load switch 4 5 6 Bottom Drain Contact 3 2 1 MOSFET Maximum Ratings Symbol VDSS VGSS ID PD TA=25o C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1a) Ratings - 20 ±8 - 5 - 20 1.8 1.8 0.9 - 55 to +150 Units TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC .036 2004 Fairchild Semiconductor...