FDC8878 Key Features
- Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A
- Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A
- High performance trench technology for extremely low rDS(on)
- Fast switching speed
- RoHS pliant
- Part: FDC8878
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 310.87 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FDC8884 | N-Channel MOSFET |
| FDC8886 | N-Channel MOSFET |
| FDC855N | Single N-Channel PowerTrench MOSFET |
| FDC8601 | N-Channel Shielded Gate PowerTrench MOSFET |
| FDC8602 | Dual N-Channel Shielded Gate PowerTrench MOSFET |