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FDC8884 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.

Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise

Key Features

  • Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A.
  • Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A.
  • High performance trench technology for extremely low rDS(on).
  • Fast switching speed.
  • RoHS Compliant General.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC8884 N-Channel Power Trench® MOSFET April 2015 FDC8884 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A „ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A „ High performance trench technology for extremely low rDS(on) „ Fast switching speed „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.