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FDC8886 - N-Channel MOSFET

General Description

Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semicond

Key Features

  • General.

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FDC8886 N-Channel Power Trench® MOSFET April 2015 FDC8886 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A „ Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A „ High performance trench technology for extremely low rDS(on) „ Fast switching speed „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.