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FDD6637 Datasheet 35V P-Channel PowerTrench MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications.

Applications • Inverter • Power Supplies

Overview

FDD6637 35V P-Channel PowerTrench® MOSFET March 2015 FDD6637 35V P-Channel PowerTrench® MOSFET.

Key Features

  • 55 A,.
  • 35 V RDS(ON) = 11.6 mΩ @ VGS =.
  • 10 V RDS(ON) = 18 mΩ @ VGS =.
  • 4.5 V.
  • High performance trench technology for extremely low RDS(ON).
  • RoHS Compliant D D G S DTO-P-2A5K2 (TO-252) G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings VDSS VDS(Avalanche) VGSS ID PD TJ, TSTG Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) (Note 4) Gate-Source Voltage Continuous Drain Current @TC=.