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FDD8424H_F085A Datasheet - Fairchild Semiconductor

Dual N & P-Channel PowerTrench MOSFET

FDD8424H_F085A Features

* Q1: N-Channel

* Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A

* Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A Q2: P-Channel

* Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A

* Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A

* Fast switching speed

* Qualified to

FDD8424H_F085A General Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application * Inverter * H-Bridge D1.

FDD8424H_F085A Datasheet (490.14 KB)

Preview of FDD8424H_F085A PDF

Datasheet Details

Part number:

FDD8424H_F085A

Manufacturer:

Fairchild Semiconductor

File Size:

490.14 KB

Description:

Dual n & p-channel powertrench mosfet.
FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V.

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FDD8424H_F085A Dual P-Channel PowerTrench MOSFET Fairchild Semiconductor

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