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FDD8451 - N-Channel MOSFET

Description

Max rDS(on) 24m: at VGS = 10V, ID = 9A Max rDS(on) 30m: at VGS = 4.5V, ID = 7A Low gate charge Fast Switching High performance trench technology for extremely low rDS(on) RoHS compliant AD FREE I This N-Channel MOSFET has been designe

Features

  • General.

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Full PDF Text Transcription

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FDD8451 N-Channel PowerTrench® MOSFET MPLEMENTATION March 2015 FDD8451 N-Channel PowerTrench® MOSFET 40V, 28A, 24m: Features General Description „ Max rDS(on) 24m: at VGS = 10V, ID = 9A „ Max rDS(on) 30m: at VGS = 4.5V, ID = 7A „ Low gate charge „ Fast Switching „ High performance trench technology for extremely low rDS(on) „ RoHS compliant AD FREE I This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on).
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