FDD850N10L Datasheet, Fairchild Semiconductor

* RDS(on) = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A
* RDS(on) = 64 mΩ (Typ.) @ VGS = 5 V, ID = 12 A
* Low Gate Charge (Typ. 22.2 nC)
* Low Crss (Typ. 42 pF) .

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Application
* Consumer Appliances
* LED TV .