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FDD8580 Key Features

  • Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A
  • Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A
  • Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V
  • Low gate resistance
  • 100% Avalanche tested
  • RoHS pliant
  • Vcore DC-DC for Desktop puters and Servers
  • VRM for Intermediate Bus Architecture

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FDD8580 Description

„ Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A „ Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V „ Low gate resistance „ 100% Avalanche tested „ RoHS pliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge,...