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FDD86113LZ Key Features

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A
  • Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A
  • HBM ESD protection level > 6 kV typical (Note 4)
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • DC-DC conversion
  • 100% UIL Tested
  • RoHS pliant
  • Pulsed

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FDD86113LZ Description

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A „ Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A „ HBM ESD protection level > 6 kV typical (Note 4) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain...