Datasheet Details
| Part number | FDD86113LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 374.47 KB |
| Description | N-Channel MOSFET |
| Download | FDD86113LZ Download (PDF) |
|
|
| Part number | FDD86113LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 374.47 KB |
| Description | N-Channel MOSFET |
| Download | FDD86113LZ Download (PDF) |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A HBM ESD protection level > 6 kV typical (Note 4) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 5.
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