Datasheet Details
| Part number | FDD86113LZ |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 374.47 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDD86113LZ Datasheet
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| Part number | FDD86113LZ |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 374.47 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDD86113LZ Datasheet
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Shielded Gate MOSFET Technology Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A HBM ESD protection level > 6 kV typical (Note 4) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized for the on-state resistance and yet maintain superior switching performance.G-S zener has been
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