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FDD8770 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Key Features

  • Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A.
  • Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A.
  • Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V.
  • Low gate resistance.
  • RoHS Compliant AD FREE I LE.
  • Vcore DC-DC for Desktop Computers and Servers.
  • VRM for Intermediate Bus Architecture D G D G DS I-PAK S G (TO-251AA) Short Lead I-PAK MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD8770/FDU8770 N-Channel PowerTrench® MOSFET MPLEMENTATION March 2015 FDD8770/FDU8770 N-Channel PowerTrench® MOSFET 25V, 35A, 4.0mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application Features „ Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 5.5mΩ at VGS = 4.