FDFC2P100 diode equivalent, integrated p-channel powertrench mosfet and schottky diode.
* Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A
* Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A
* Low Gate Charge (3.4nC typ)
* Compact industry standar.
The FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for.
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