FDFC2P100 Key Features
- Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A
- Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A
- Low Gate Charge (3.4nC typ)
- pact industry standard SuperSOTTM-6 package
- VF < 0.45 V at IF = 1A
- RoHS pliant
- Part: FDFC2P100
- Manufacturer: Fairchild (official site)
- Size: 339.07 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDFC3N108 | N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode |
| FDF5680 | 60V N-Channel PowerTrench MOSFET |
| FDFM2N111 | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
| FDFM2P110 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| FDFMA2N028Z | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
FDFC2P100 Description
The FDFC2P100 bine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for DC to DC converters.