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FDFC3N108 Datasheet, Fairchild Semiconductor

FDFC3N108 Datasheet, Fairchild Semiconductor

FDFC3N108

datasheet Download (Size : 111.49KB)

FDFC3N108 Datasheet

FDFC3N108 diode equivalent, n-channel 1.8v specified powertrench mosfet with schottky diode.

FDFC3N108

datasheet Download (Size : 111.49KB)

FDFC3N108 Datasheet

Features and benefits


* 3 A, 20 V RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V
* Low gate charge
* High performance trench technology for extremely low RDS(ON) App.

Application

Features
* 3 A, 20 V RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V
* Low gate charge
* High.

Description

This N-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It is combined with a low forward drop Schottky that is isolated from the MOSFET, providing a compact power solution for battery power management and DC/D.

Image gallery

FDFC3N108 Page 1 FDFC3N108 Page 2 FDFC3N108 Page 3

TAGS

FDFC3N108
N-Channel
1.8V
Specified
PowerTrench
MOSFET
with
Schottky
Diode
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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