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FDFMA2P857 Datasheet Integrated P-channel Powertrench MOSFET And Schottky Diode

Manufacturer: Fairchild (now onsemi)

Overview: FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode February 2007 FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode –20V, –3.

General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.

It

Key Features

  • MOSFET:.
  • Max rDS(on) = 120mΩ at VGS =.
  • 4.5V, ID =.
  • 3.0A.
  • Max rDS(on) = 160mΩ at VGS =.
  • 2.5V, ID =.
  • 2.5A.
  • Max rDS(on) = 240mΩ at VGS =.
  • 1.8V, ID =.
  • 1.0A General.

FDFMA2P857 Distributor