FDFMA2P857 Key Features
- Max rDS(on) = 120mΩ at VGS = -4.5V, ID = -3.0A
- Max rDS(on) = 160mΩ at VGS = -2.5V, ID = -2.5A
- Max rDS(on) = 240mΩ at VGS = -1.8V, ID = -1.0A
- Part: FDFMA2P857
- Manufacturer: Fairchild (official site)
- Size: 407.86 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDFMA2P853 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| FDFMA2P853T | Integrated P-Channel MOSFET |
| FDFMA2P859T | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| FDFMA2P029Z | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| FDFMA2N028Z | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
FDFMA2P857 Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.